型號(hào): 5SHY3545L0020
5SHY3545L0020 ABB 5SHY系列可控硅
在實(shí)時(shí)控制過(guò)程中，干擾造成比較嚴(yán)重的危害之一就是沖毀RAM中的數(shù)據(jù)，由于5SHY3545L0020 ABB 5SHY系列可控硅中保存的是各種原始數(shù)據(jù)、標(biāo)志變量等，如果被破壞，會(huì)造成系統(tǒng)出錯(cuò)或無(wú)法運(yùn)行，根據(jù)數(shù)據(jù)被沖毀的程度，一般可分為三類:
整個(gè)RAM數(shù)據(jù)被沖毀
RAM中某片數(shù)據(jù)被沖毀
個(gè)別數(shù)據(jù)被沖毀。
在工業(yè)控制系統(tǒng)中，5SHY3545L0020 ABB 5SHY系列可控硅的大部分內(nèi)容是為了進(jìn)行分析、比較而臨時(shí)存放的，不允許丟失的數(shù)據(jù)只占極少部分。在這種情況下，除了這些不允許丟失的數(shù)據(jù)外，其余大部分內(nèi)容允許短時(shí)間被破壞，最多只引起系統(tǒng)的一個(gè)很短時(shí)間的波動(dòng)，快能自動(dòng)恢復(fù)正常。因此，在工控軟件中，只要注意對(duì)少數(shù)不允許丟失的數(shù)據(jù)保護(hù)，一般常用的方法有“校驗(yàn)法”和“設(shè)標(biāo)法”。這兩種方法各有千秋，校驗(yàn)法比較繁鎖，但查錯(cuò)的可信度高。設(shè)標(biāo)法簡(jiǎn)單，但對(duì)數(shù)據(jù)表中個(gè)別數(shù)據(jù)沖毀的情況，查錯(cuò)則無(wú)難為力。在編程中一般應(yīng)綜合使用，其具體做法為:
將RAM工作區(qū)重要區(qū)域的始端和尾端各設(shè)置一個(gè)標(biāo)志碼“0”或“1”,對(duì)RAM中固定不變的數(shù)據(jù)表格設(shè)置校驗(yàn)字

5SHY3545L0016

5SHY3545L0020 ABB 5SHY系列可控硅是1996年問(wèn)世的用于巨型電力電子成套裝置中的新型電力半導(dǎo)體器件。1GT是一種基于GTO結(jié)構(gòu)、利用集成柵極結(jié)構(gòu)進(jìn)行柵極硬嘔動(dòng)、采用緩沖層結(jié)構(gòu)及陽(yáng)極透明發(fā)射極技術(shù)的新型大功率半導(dǎo)體開(kāi)關(guān)器件，具有晶閘管的通態(tài)特性及晶體管的開(kāi)關(guān)特性。由于采用了緩沖結(jié)構(gòu)以及淺層發(fā)射極技術(shù)，因而使動(dòng)態(tài)損耗降低了約50%，另外，此類器件還在一個(gè)芯片上集成了具有良好動(dòng)態(tài)特性的續(xù)流二極管，從而以其獨(dú)特的方式實(shí)現(xiàn)了晶閘管的低通態(tài)壓降、高阻斷電壓和晶體管穩(wěn)定的開(kāi)關(guān)特性有機(jī)結(jié)合.
5SHY3545L0020 ABB 5SHY系列可控硅使流裝置在功率、可靠性、開(kāi)關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進(jìn)展，給電力電子成套裝置帶來(lái)了新的飛躍。IGCT是將GTO芯片與反并聯(lián)二極管和柵極驅(qū)動(dòng)電路集成在一起，再與其柵極驅(qū)動(dòng)器在外圍以低電感方式連接，結(jié)合了晶體管的穩(wěn)定關(guān)斷能力和晶閘管低通態(tài)損耗的優(yōu)點(diǎn)，在導(dǎo)通階段發(fā)揮晶聞管的性能，關(guān)斷階段呈現(xiàn)晶體管的特性。1GCT具有電流大、電壓高、開(kāi)關(guān)頻率高、可靠性高、結(jié)構(gòu)緊湊、損耗低等特點(diǎn)，而且造成本低，成品率高，有很好的應(yīng)用前景。采用晶閘管技術(shù)的GTO是常用的大功率開(kāi)關(guān)器件，它相對(duì)于采用晶體管技術(shù)的IGBT在截止電壓上有更言的性能，5SHY3545L0020 3BHE014105R0001 但廣泛應(yīng)用的標(biāo)準(zhǔn)GTO驅(qū)動(dòng)技術(shù)造成不均勻的開(kāi)通和關(guān)斷過(guò)程，需要高成本的dv/dt和di/dt吸收電路和較大功率的柵極驅(qū)動(dòng)單元，因而造成可靠性下降，價(jià)格較高，也不利于串聯(lián)。但是，在大功率MCT技術(shù)尚未成熟以前，IGCT已經(jīng)成為高壓大功率低頻交流器的優(yōu)選方案。

5SHY3545L0020

Model: 5SHY3545L0020
5SHY3545L0020 ABB 5SHY series thyristor
In the process of real-time control, one of the more serious hazards caused by interference is to destroy the data in RAM. Since 5SHY3545L0020 ABB 5SHY series SCR stores a variety of original data, marking variables, etc., if damaged, it will cause the system to make errors or fail to operate. According to the degree of data being destroyed, it can be generally divided into three categories:
The entire RAM data was flushed
A piece of data in the RAM is flushed
Individual data was flushed.
In industrial control systems, most of the content of 5SHY3545L0020 ABB 5SHY series thyristors is temporarily stored for analysis and comparison, and only a very small part of the data is not allowed to be lost. In this case, in addition to these data that is not allowed to be lost, most of the rest of the content is allowed to be destroyed for a short time, at most only cause a short period of fluctuations in the system, and quickly restore to normal. Therefore, in the industrial control software, as long as attention is paid to the protection of a small number of data that is not allowed to be lost, the commonly used methods are “calibration method” and “marking method”. These two methods have their own advantages, the verification method is more complicated, but the reliability of error detection is high. The marking method is simple, but in the case of individual data flushing in the data table, it is not difficult to check the error. In general, it should be used comprehensively in programming, and its specific practices are:
Set a flag code “0” or “1” at the beginning and end of the important area of the RAM work area, and set the check word for the fixed data table in the RAM
5SHY3545L0020 ABB 5SHY series SCR is a new type of power semiconductor device introduced in 1996 for use in large power electronics packages. 1GT is a new type of high-power semiconductor switching device based on GTO structure, which adopts integrated gate structure for hard gate retching, buffer layer structure and transparent anode emitter technology. It has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.

5SHY3545L0020

5SHY3545L0020 ABB 5SHY series SCR has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronics complete sets of devices. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the transistor in the on-stage and the characteristics of the transistor in the off-stage. 1GCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has more performance than IGBT using transistor technology in cut-off voltage, 5SHY3545L0020 3BHE014105R0001, but the widely used standard GTO drive technology causes uneven opening and closing process. The need for high cost dv/dt and di/dt absorption circuits and higher power grid drive units, resulting in reduced reliability, higher prices, and is not conducive to series. However, before the high-power MCT technology is not mature, IGCT has become the preferred solution for high-voltage high-power low-frequency communicators.

5SHY3545L0020